发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To quickly generate a large amount of ozone by a plurality of ozonizers, to disperse risk of accumulation of liquid ozone since the liquid ozone can be separately accumulated in a plurality of generating chambers, and to cancel the difference in the amount of accumulation of the liquid ozone between the generating chambers. SOLUTION: In an oxide film-forming apparatus 10 having a treating chamber 12 for treating a wafer 1, a plurality of ozonizers 29, 36, and 43 for generating ozone from oxygen, a plurality of generating chambers 21, 22, and 23 that are connected to the ozonizers each, liquify the ozone that is generated by the ozonizers for generating liquid ozone, and vaporize the liquid ozone for generating ozone having a high degree of purity, ozone supply piping 50 for supplying the ozone having a high degree of purity that is generated in the generating chambers to the treating chamber 12, generating chambers 21, 22, and 23 are connected one another with tie pipes 60 and 62 where cutoff valves 61 and 63 are included. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003188163(A) 申请公布日期 2003.07.04
申请号 JP20010389071 申请日期 2001.12.21
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANIGUCHI TAKESHI
分类号 C01B13/10;H01L21/31;(IPC1-7):H01L21/31 主分类号 C01B13/10
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