| 摘要 |
PURPOSE: A method for forming a semiconductor device by using dual damascene processing is provided to be capable of preventing via poison by using polymers. CONSTITUTION: The first interlayer dielectric(102) having a contact hole is formed on a semiconductor substrate(101). A metal line(103) is filled into the contact hole. The first etch stop layer(104) is formed on the resultant structure. The second interlayer dielectric(105) having a via hole and the first insulating layer(106) are sequentially formed. The second insulating layer(109) is selectively etched by using a photoresist pattern(110) as a mask. At this time, a polymer(111) is formed at both sidewalls of the second insulating layer(109) and the photoresist pattern(110). A trench is then formed by selectively etching the first insulating layer(106) and the second interlayer dielectric(105). After removing the polymer(111), the second insulating layer(109) is removed.
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