| 摘要 |
PURPOSE: A method is provided to be capable of removing foreign substance under a metal line forming process for a semiconductor device by using Ar RF(Radio Frequency) plasma. CONSTITUTION: A lower metal line(1) made of a Ti, TiN, Al or W, Ti, and TiN layer, is formed on a predetermined structure. After depositing an IMD(Inter Metal Dielectric)(2) on the resultant structure, a contact hole(3) is formed by selectively etching the IMD for exposing the lower metal line. Then, the exposed lower metal line is partially removed by carrying out an etching process. Polymers, a native oxide layer, and photoresist existing on the metal line and IMD layer, are removed by using Ar RF(Radio Frequency) plasma. After depositing a barrier metal layer(8) on the resultant structure, an upper metal line(9) is formed on the barrier metal layer.
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