| 摘要 |
PURPOSE: An image sensor with trench-type isolation is provided to be capable of minimizing failure due to well formation and increasing capacitance of a photodiode. CONSTITUTION: A plurality of photodiodes(PD) is formed in a semiconductor layer of the first conductive type. A well(P-well) of the first conductive type is formed in the semiconductor layer located between the photodiodes(PD). A filed insulating layer(Fox) of a trench structure is formed in the semiconductor layer located between the photodiode(PD) and the well(P-well). At this time, the depth of the well is same to the depth of the field insulating layer(Fox).
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