| 摘要 |
PURPOSE: A method for forming a copper wiring of a semiconductor device is provided to be capable of improving the uniformity of the copper wiring. CONSTITUTION: An interlayer dielectric(103) having the first and second via hole is formed on a semiconductor substrate(101) having a lower copper wiring(102). After depositing a barrier layer and a copper film on the resultant structure, an insulating layer is formed on the copper film by using spin-coating. The copper film is planarized by CMP(Chemical Mechanical Polishing) using a slurry, wherein the polishing selectivity of the slurry between the copper film and the insulating layer is 1: 1. By removing the barrier layer, an upper copper wiring(108a) is formed in the first and second via hole.
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