| 摘要 |
PURPOSE: A method for manufacturing an isolation layer of a semiconductor device is provided to be capable of preventing hump and INWE(Inverse Narrow Width Effect) caused by electric field focused at edge portions of an active region. CONSTITUTION: A pad oxide layer and a doped polysilicon layer are sequentially formed on a semiconductor substrate defined by the first and second region. A trench is formed to expose the first region by selectively etching the pad oxide layer and the doped polysilicon layer. An oxide layer(24) is formed on the resultant structure including the trench. The oxide layer(24) located on the substrate of the first region is removed. An SEG(Selective Epitaxial Growth) layer(25) is then formed in the trench.
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