METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing electrical short between a bit line and a gate due to over-etching of a buffer oxide layer. CONSTITUTION: A stacked gate(25) including a gate oxide layer(22), a gate conductive layer(23) and a hard mask(24), is formed on a semiconductor substrate(21). A buffer oxide layer(26) is formed on the stacked gate(25) and the substrate(21). A photoresist layer is coated on the buffer oxide layer(26) to entirely fill the stacked gate(25). The photoresist layer is blanket etched so as to the buffer oxide layer located on the hard mask(24). The exposed buffer oxide layer and the remaining photoresist layer are removed. A nitirde spacer(28a) is formed at both sidewalls of the remaining buffer oxide layer(26) and the exposed hard mask.