| 摘要 |
PURPOSE: Provided is a slurry composition suitable for CMP(Chemical Mechanical Polishing/Planarization) process of metal line, which has a uniform polishing ability, and shows excellent dispersion stability when stored for a long time, and does not damage a grinding machine. CONSTITUTION: The slurry composition for polishing a metal line, contains 1-30 wt% of metal oxide granules, 0.01-1.0 wt% of iodine-based compound, 0.01-1.0 wt% of vinyl polymer, 0.25-2 wt% of hydrogen peroxide, 0.01-0.05 wt% of phosphorus-based compound, 0.3-0.5 wt% of nitric acid, and the rest of deionized water. The metal oxide is at least one compound selected from the group consisting of silica(SiO2), alumina(Al2O3), zirconia, and ceria, the iodine-based compound is at least one compound selected from the group consisting of iodobenzene diacetate, iodobenzoic acid, and iodoaniline, the vinyl polymer is poly(vinyl alcohol) having average molecular weight of 9,000-50,000, and the phosphorus-based compound is trimethyl phosphite or triethyl phosphite. |
