METHOD FOR FORMING SILICIDE LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a silicide layer of a semiconductor device is provided to be capable of reducing junction leakage current and obtaining thermal stability by using Ti and Co as a source material of the silicide layer. CONSTITUTION: A transistor including a gate electrode(15) and a junction region(17) is formed at a semiconductor substrate(11). A lower insulating layer(23) having a contact hole is formed on the resultant structure. A high fusion point metal film, such as Ti or Co is formed on the exposed junction region(17) via the contact hole. A silicide layer(29) is then formed on the junction region(17) by two-step RTA(Rapid Thermal Annealing). That is, the first RTA is performed after rising or lamp-up of the temperature, and the second RTA is performed after falling or lamp-down of the temperature. After removing the non-reacted high fusion point metal film, a contact plug(31) is then formed in the contact hole.