| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photomask material capable of rapidly forming a mask pattern with high sensitivity and high resolution by using a light of ≥405 nm wavelength and capable of producing a high quality photomask in which defective parts can be corrected, which has excellent mechanical strength, hardness and solvent resistance, a low reflectance to light of <405 nm wavelength and which is free of voids. <P>SOLUTION: The photomask material has, on a light transmitting substrate, a photosensitive layer comprising i) an alkali-soluble resin binder having polymerizable unsaturated bonds, ii) a monomer having at least one polymerizable unsaturated bond, iii) a photopolymerization initiation system having photosensitivity in a wavelength region of ≥405 nm and iv) colorant surface-treated with a polymerizable dispersant, wherein the photosensitive layer is formed by coating. <P>COPYRIGHT: (C)2003,JPO |
