Method for manufacturing semiconductor device

摘要

The present invention discloses a method for manufacturing a semiconductor device. In the method for manufacturing the semiconductor device, a contact plug connected to a predetermined region for a bit line contact and a storage electrode contact is formed in a cell region of a semiconductor substrate before a source/drain region is formed in a peripheral circuit region of the semiconductor substrate using an epitaxially grown silicon film in a high temperature process, to obtain a contact plug having a high filling characteristic and a low contact resistance. In addition, additional ion-implantation process of a P type impurity in the subsequent bit line contact formation can be omitted to simplify the fabrication process. The method is suitable for the high speed merged DRAM logic process to achieve the high speed operation of the semiconductor device, and improves a process yield and reliability of the semiconductor device.