SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

摘要

A substrate processing apparatus has a process space (11C) containing a substrate to be processed and a plasma creating space (11B) not containing the substrate and separated from the process space (11C) by a control electrode (131). The control electrode is composed of a conductive member having openings (131a) through which a plasma created in a process vessel passes. The control electrode is covered with aluminum oxide or conductive nitride. A gas containing He and N2 is supplied into the process chamber of the substrate processing apparatus. A plasma is created under such a condition that atomic nitrogen N* is excited in the plasma creating space, and the substrate is nitrided with the atomic nitrogen N*.