TWO-SECTION DISTRIBUTED BRAGG REFLECTOR LASER

摘要

There is provided a semiconductor laser comprising a gain section (10) and an adjacent Bragg section (11), wherein output laser light is emitted via a facet at an interface between air and the gain section (17), the Bragg section comprising a distributed reflecting structure (12) having a length substantially greater than required to ensure single longitudinal mode operation of the laser in which the side-mode suppression ratio (SMSR) is 35 dB or more, thereby in use substantially suppressing optical feedback from a facet (18) at an interface between the Bragg section and air, and wherein an interface between the Bragg section and the gain is quantum well intermixed, thereby rendering the interface substantially anti-reflecting at the wavelength of the laser.