| 摘要 |
A system for fabricating a compound semiconductor device includes a gas treatment apparatus that performs a hydrogen chloride gas etching on a compound semiconductor substrate, a radical treatment apparatus that performs a radical hydrotreatment on the substrate, a semiconductor film forming apparatus that forms a compound semiconductor film on the treated substrate, a conductive film forming apparatus that forms a conductive film on the substrate, and an ultrahigh vacuum transfer path that connects together the several apparatuses so that the substrate being processed can be transferred through the transfer path from apparatus to apparatus under a continuously maintained ultrahigh vacuum environment. Some of the apparatuses can overlap or share functions with one another.
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