发明名称 |
Field emission device and method of fabricating the same |
摘要 |
The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.
|
申请公布号 |
US2003122466(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20020160413 |
申请日期 |
2002.05.30 |
申请人 |
AHN SEONG DEOK;LEE JIN HO;CHO KYOUNG IK |
发明人 |
AHN SEONG DEOK;LEE JIN HO;CHO KYOUNG IK |
分类号 |
H01J1/30;H01J1/304;H01J9/02;(IPC1-7):H01J1/02 |
主分类号 |
H01J1/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|