发明名称 Field emission device and method of fabricating the same
摘要 The present invention relates to a field emission device and a method of fabricating the same. The method includes forming a hole having a nanometer size using silicon semiconductor process and then forming an emitter within the hole to form a field emission device. Therefore, the present invention can reduce the driving voltage and thus lower the power consumption.
申请公布号 US2003122466(A1) 申请公布日期 2003.07.03
申请号 US20020160413 申请日期 2002.05.30
申请人 AHN SEONG DEOK;LEE JIN HO;CHO KYOUNG IK 发明人 AHN SEONG DEOK;LEE JIN HO;CHO KYOUNG IK
分类号 H01J1/30;H01J1/304;H01J9/02;(IPC1-7):H01J1/02 主分类号 H01J1/30
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