摘要 |
The device has switched power semiconductors (T1,T2) and a control circuit (2) for driving the power semiconductors, which are in the form of reverse blocking insulated gate bipolar transistors or IGBTs connected in reverse parallel. The control circuit is formed to switch the IGBTs on and off during the positive and negative half waves. AN Independent claim is also included for the following: a method of providing alternating or 3-phase currents
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