发明名称 |
PHASE SHIFTED SURFACE EMITTING DFB LASER STRUCTURES WITH GAIN OR ABSORPTIVE GRATINGS |
摘要 |
A surface emitting semiconductor laser is shown having a semiconductor lasing structure having an active layer, opposed cladding layers contiguous to said active layer, a substrate, and electrodes by which current can be injected into the semiconductor lasing structure. Also included is a distributed diffraction grating having periodically alternating elements, each of the elements being characterized as being either a high gain element or a low gain element. Each of the elements has a length, the length of the high gain element and the length of the low gain element together defining a grating period, where the grating period is in the range required to produce an optical signal in the optical telecommunications signal band. A phase shifting structure is provided in the center of the grating to cause a peak intensity to occur over the center of the cavity by altering a mode profile of the output signal, while spatial hole burning arising from said altered mode profile is ameliorated.
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申请公布号 |
WO03055019(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
WO2002CA01893 |
申请日期 |
2002.12.11 |
申请人 |
PHOTONAMI INC.;SHAMS-ZADEH-AMIRI, ALI, M.;LI, WEI |
发明人 |
SHAMS-ZADEH-AMIRI, ALI, M.;LI, WEI |
分类号 |
H01S5/183;H01S1/00;H01S5/12;H01S5/187;(IPC1-7):H01S5/18 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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