发明名称 |
Low-voltage-triggered SOI-SCR device and associated ESD protection circuit |
摘要 |
A silicon-on-insulator low-voltage-triggered silicon controlled rectifier device structure that is built upon a substrate and an insulation layer. The insulation layer has a plurality of isolation structures thereon to define a device region. A first-type well and a second-type well are formed over the insulation layer. The first-type and second-type wells are connected. A first gate and a second gate are formed over the first-type well and the second-type well, respectively. The first-type well further includes a first second-type doped region and a first first-type doped region formed between the first second-type doped region and the isolation structure adjacent to the first second-type doped region. The first second-type doped region and the first first-type doped region together form a cathode of the SOI-SCR device. A second first-type doped region is formed within the first-type well between the first second-type doped region and the first gate structure adjacent to the first second-type doped region. A third first-type doped region is formed within the first and the second-type well around their junction between the first and second-type well. The second-type well further includes a second second-type doped region and a fourth first-type doped region within the second-type well between the second second-type doped region and the second gate adjacent to the second second-type doped region. The second second-type doped region and the fourth first-type doped region together form an anode of the SOI-SCR device.
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申请公布号 |
US2003122192(A1) |
申请公布日期 |
2003.07.03 |
申请号 |
US20030367502 |
申请日期 |
2003.02.13 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
KER MING-DOU;HUNG KEI-KANG;HUANG SHAO-CHANG |
分类号 |
H01L23/60;H01L23/62;H01L27/01;H01L27/02;H01L27/12;H02H3/22;H02H9/00;(IPC1-7):H01L27/01 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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