| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving the efficiency of patterning and doping processes by performing a gate ion-implantation after forming a gate pattern. CONSTITUTION: An isolation layer(12) is formed in a semiconductor substrate(11) to define a transistor region having different conductive-type channels. Gate electrode patterns(13a,13b) are formed on the substrate(11). A lightly doped drain region(14) is formed in the substrate located between the gate electrode patterns(13a,13b). The first insulating layer(15) and the second insulating layer are sequentially formed on the resultant structure so as to expose the surface of the gate electrode patterns. Then, a gate ion-implantation is performed to the exposed gate electrode patterns. After removing the second insulating layer, a gate spacer(18) is formed at both sidewalls of the gate electrode patterns(13a,13b). Then, a source/drain ion-implantation is carried out.
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