发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device comprises a semiconductor substrate (24) on which an element (39) is formed and a plug (19a) and a wiring layer (19b) buried in the low dielectric constant insulation film (14) formed over the semiconductor substrate and having a relative dielectric constant of 3 or lower. A high Young's modulus insulation film (16) having a Young's modulus of 15 GPa or higher is formed in contact with the side of the plug between the low dielectric constant insulation film and the plug.
申请公布号 EP1324383(A2) 申请公布日期 2003.07.02
申请号 EP20020021330 申请日期 2002.09.20
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 ITO, SACHIYO;HASUNUMA, MASAHIKO;KAWANOUE, TAKASHI
分类号 H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/768 主分类号 H01L21/768
代理机构 代理人
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