发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
A semiconductor device comprises a semiconductor substrate (24) on which an element (39) is formed and a plug (19a) and a wiring layer (19b) buried in the low dielectric constant insulation film (14) formed over the semiconductor substrate and having a relative dielectric constant of 3 or lower. A high Young's modulus insulation film (16) having a Young's modulus of 15 GPa or higher is formed in contact with the side of the plug between the low dielectric constant insulation film and the plug. |
申请公布号 |
EP1324383(A2) |
申请公布日期 |
2003.07.02 |
申请号 |
EP20020021330 |
申请日期 |
2002.09.20 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
ITO, SACHIYO;HASUNUMA, MASAHIKO;KAWANOUE, TAKASHI |
分类号 |
H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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