| 摘要 |
PURPOSE: A magnetic memory cell for symmetric switching property is provided to be capable of reducing demagnetization filed and improving symmetric switching property by controlling coupling field of a pinned layer and a free layer. CONSTITUTION: A magnetic memory cell for symmetric switching property comprises the first ferroelectric layer(21), a spacer(22), a seed layer(23), an anti-ferroelectric layer(24), the second ferroelectric layer(25) as a pinned layer, an insulating layer(26), and a free layer(27). The seed layer(23) and the second ferroelectric layer(25) have same magnetization direction. By controlling the thickness of the spacer(22) and the coupling field, the demagnetization field is reduced.
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