Method of depositing heusler alloy thin film by co-sputtering

摘要

A method of manufacturing a Heusler alloy thin film by co-sputtering is provided. The Heusleralloy thin film has a general structure formula X2YZ or XYZ by co-sputtering using a deposition apparatus having a substrate placed on a substrate holder in a chamber and targets positioned on a target bracket spaced apart from the substrate. Components of the Heusler alloy thin film are placed on the target bracket as one of single targets and binary alloy targets. Thus, it is easy to manufacture a Heusler alloy thin film having excellent magnetic characteristics.