| 摘要 |
PURPOSE: A method for forming a contact region of a semiconductor device is provided to be capable of preventing over-etching of an interlayer dielectric due to misalignment by forming an etch stop layer on a lower metal line. CONSTITUTION: A lower metal film and the first etch stop layer are sequentially formed on a substrate(21). After selectively etching the first etch stop layer, a lower metal line(22a) is formed by patterning the lower metal film using the pattern of the first etch stop(23a) as a mask. The first interlayer dielectric(24) is formed on the substrate having the same height to the pattern of the first etch stop(23a). The second etch stop layer(25a) and the second interlayer dielectric(26a) are sequentially formed on the resultant structure. A contact region is defined by selectively etching the second interlayer dielectric(26a). The lower metal line(22a) is exposed by selectively etching the second and first etch stop layer(25a,23a).
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