| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device using dual damascene processing is provided to be capable of performing self-aligned dual damascene processing by cross-linking of a resist pattern. CONSTITUTION: An interlayer dielectric(12) is formed on a semiconductor substrate(11). The first mask pattern(13) is formed on the interlayer dielectric. A polymer substance(14) containing crosslink agents is formed on the first mask pattern(13). By baking the polymer substance(14), the crosslink agents are diffused into the first mask pattern. The developing is performed ant simultaneously removed the remaining polymer substance(14). The second mask pattern is formed on the first mask pattern(14). A via hole is formed and the second mask pattern is cured. After removing the exposed first mask pattern, a trench is formed using the second mask pattern as a mask. The remaining first and second mask pattern are removed.
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