| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of minimizing leakage current and thinning the thickness of dielectric film by improving roughness at interface between MPS(Metastable PolySilicon) and the dielectric film. CONSTITUTION: An interlayer dielectric(20) having a plug(30) is formed on a substrate(10). After forming an oxide layer(40) on the resultant structure, a capacitor contact hole is formed to expose the plug by selectively etching the oxide layer. A lower electrode(50) is formed by depositing the first polysilicon layer on the contact hole and the oxide layer and growing MPS. A native oxide generated on the lower electrode(50) is then removed. A dielectric film(60) is formed by oxidation or nitridation of the lower electrode using high density plasma. An upper electrode(70) is then formed on the dielectric film.
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