| 摘要 |
PURPOSE: A method for manufacturing an Ir/IrO2 electrode of a semiconductor capacitor is provided to be capable of improving the capacitance and reliability of the capacitor by using an ALD(Atomic Layer Deposition). CONSTITUTION: Source gas containing Ir flows into a reaction chamber(S10). The source gas containing Ir is exhausted from the reaction chamber or purge gas flows into the reaction chamber for removing the source gas(S12). And then, oxygen gas or reduction gas flows into the reaction chamber(S14). The oxygen gas or reduction gas is exhausted from the reaction chamber or purge gas flows into the reaction chamber for removing the oxygen gas or reduction gas(S16). At this time, a lower/upper electrode made of an Ir or IrO2 single atomic layer, are completed.
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