MEMORIZING METHOD OF MAGNETIC RAM USING BIPOLAR JUNCTION TRANSISTOR

摘要

PURPOSE: A memorizing method of a magnetic RAM(Random Access Memory) using a bipolar junction transistor is provided to the property and credibility of a semiconductor device by generating the magnetic field using a current that flows from an emitter to a collector of the bipolar junction transistor. CONSTITUTION: A semiconductor substrate(211) is a base of a bipolar junction transistor. An emitter(213a) and a collector(213b) of the bipolar junction transistor are provided on an active region of the semiconductor substrate(211). An MTJ(Magnetic Tunnel Junction) cell(221) is provided on an active region separated between the emitter(213a) and the collector(213b). A word line(223) is provided on an upper portion of the MTJ cell(221). A bit line(235) is connected to the collector(213b). A reference voltage line(227) is connected to the emitter(213a).