| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to be capable of compensating the topology of MIM(Metal Insulator Metal) capacitor. CONSTITUTION: After forming an interlayer dielectric(103) on a logic memory region, the first metal patterns(102) are formed between the interlayer dielectric. A trench and the first via hole are formed to expose the first metal patterns(102). The first plug(105b) is formed in the first via hole and a spacer(105a) is formed at both sidewalls of the trench. The second metal pattern(106b) is connected to the first plug and a lower electrode(106a) is simultaneously formed in the trench. A dielectric film(107) and an upper electrode(108a) are selectively formed on the lower electrode. The second interlayer dielectric(109) having the second via holes is formed on the resultant structure. The second plugs(110) are filled into the second via holes. Metal lines(111) are formed to connect the second plugs(110).
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