| 发明名称 |
Method of preventing boron penetration |
| 摘要 |
A high-density plasma process is used to deposit a high-density silicon nitride for use as a gate sidewall spacer (30). The low concentration of hydrogen in this material helps prevent boron diffusion across the gate oxide (15), promoting the use of boron-doped gates (20) in P-channel devices. <IMAGE> |
| 申请公布号 |
EP0928015(A3) |
申请公布日期 |
2003.07.02 |
| 申请号 |
EP19980124850 |
申请日期 |
1998.12.31 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
NAG, SOMNATH S.;GRIDER, DOUGLAS T. |
| 分类号 |
B01J19/08;C23C16/34;C23C16/52;H01L21/283;H01L21/318;H01L21/336;H01L21/762;H01L23/31;H01L29/49 |
主分类号 |
B01J19/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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