| 摘要 |
PURPOSE: A method for forming an isolation region of a semiconductor device is provided to be capable of preventing the generation of mote at the top corner of a trench. CONSTITUTION: A pad oxide layer(22) and a polysilicon layer are sequentially formed on a semiconductor substrate(21). Boron ions are implanted into the polysilicon layer. After exposing a desired portion of the substrate by selectively etching the polysilicon layer and the pad oxide layer, a trench is formed by selectively removing the exposed substrate(21). A pre-cleaning and cleaning process are performed. An oxide layer(26) is grown the surface of the trench by oxidation. An isolation layer(27a) is formed by filling an insulating layer and planarizing the insulating layer using the polysilicon layer as a stop layer. Then, the polysilicon layer is removed.
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