METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of preventing bridge between contact plugs by removing a scratch region using blanket etching after CMP. CONSTITUTION: Conductive lines(103) having a mask insulating pattern(105) are formed on a semiconductor substrate(101). An interlayer dielectric(109) is formed on the resultant structure. CMP(Chemical Mechanical Polishing) is performed to planarize the interlayer dielectric. At this time, a scratch region is formed on the interlayer dielectric(109). The scratch region is removed by a blanket etching process. Contact holes are formed by selectively etching the interlayer dielectric(109). Contact plugs are formed in the contact holes.