| 摘要 |
PURPOSE: A method for manufacturing an image sensor is provided to reduce dark current by reducing defects of silicon lattice at interface of STI(Shallow Trench Isolation). CONSTITUTION: A trench having the width of 1000-3000Å and the depth of 1500-10000Å, is formed by selectively etching a semiconductor layer(20). A field oxide layer(25) is filled into the trench. Annealing is performed so as to densify the field oxide layer(25). A gate electrode(27) having a gate insulating layer(26) is then formed on the semiconductor layer. A photodiode is formed in the semiconductor layer(20) between the gate electrode(27) and the field oxide layer(25).
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