发明名称 |
Treatment for film surface to reduce photo footing |
摘要 |
An improved photolithography technique is provided whereby the beneficial effects of using an anti-reflective coating may be realized while maintaining critical dimensions in each subsequent step. This improvement is realized by the treatment of the anti-reflective coating with a gaseous plasma or a solution of sulfuric acid and hydrogen peroxide. By treating the anti-reflective coating with gaseous plasma or solution of sulfuric acid and hydrogen peroxide, no "footing" results and the critical dimensions as set by the photoresist mask are preserved to provide an accurately patterned mask for subsequent steps.
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申请公布号 |
US6586820(B2) |
申请公布日期 |
2003.07.01 |
申请号 |
US20020097169 |
申请日期 |
2002.03.13 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
YIN ZHIPING;SANDHU GURTEJ S. |
分类号 |
H01L21/027;H01L21/311;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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