发明名称 |
Semiconducting oxide nanostructures |
摘要 |
Nanostructures and methods of fabricating nanostructures are disclosed. A representative nanostructure includes a substrate having at least one semiconductor oxide. In addition, the nanostructure has a substantially rectangular cross-section. A method of preparing a plurality of semiconductor oxide nanostructures that have a substantially rectangular cross-section from an oxide powder is disclosed. A representative method includes: heating the oxide powder to an evaporation temperature of the oxide powder for about 1 hour to about 3 hours at about 200 torr to about 400 torr in an atmosphere comprising argon; evaporating the oxide powder; and forming the plurality of semiconductor oxide nanostructures.
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申请公布号 |
US6586095(B2) |
申请公布日期 |
2003.07.01 |
申请号 |
US20020042868 |
申请日期 |
2002.01.08 |
申请人 |
GEORGIA TECH RESEARCH CORP. |
发明人 |
WANG ZHONG L.;PAN ZHENGWEI;DAI ZURONG |
分类号 |
C01B13/14;C01G11/00;C01G15/00;C01G19/02;C01G21/02;C30B29/64;(IPC1-7):D02G3/02 |
主分类号 |
C01B13/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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