| 摘要 |
A gate insulating film, a gate electrode, a gate-top protection film, LDD layers and nitride film sidewalls are formed on a semiconductor substrate. Source/drain regions are formed in the semiconductor substrate. After deposition of an interlayer insulating film on the resultant substrate, a hole is formed through the interlayer insulating film and the gate-top protection film to reach the gate electrode, and a gate contact is formed by filling the hole. The gate-top protection film has an opening exposing part of a portion of the area on the top surface of the gate electrode other than the region in contact with the gate contact. This facilitates external diffusion of hydrogen during annealing, or recovery from a fixed level and a damage layer during sintering.
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