| 摘要 |
The present invention relates to a silicon-on-insulator (SOI) substrate, a method for fabricating the SOI substrate and a SOI MOSFET using the SOI substrate to easily migrate the design applied to a conventional bulk silicon substrate to the SOI design and to remove a floating body effect. The SOI substrate includes a mono-silicon substrate, a buried oxide layer formed over the surface of the mono-silicon substrate, and a thin mono-silicon layer formed over the surface of the buried oxide layer. Conductive layers are formed at through holes of the buried oxide layer positioned between the predetermined regions of the thin layer and the substrate for body contacts. Therefore, additional layout spaces are not needed for body contacts and the constant body contact resistance can allow the conventional circuit design applied to die bulk silicon substrate to be migrated to the circuit design applied to the SOI substrate without any modifications. Also, a variety of operational failures caused by the floating effect can be eliminated in die SOI substrate. As a consequence, additional effort is not required for designing or verifying the circuit of the present invention, so as to make it possible to construct a highly efficient, but low power consuming system.
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