METHOD FOR MANUFACTURING IC SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an IC semiconductor device is provided to be capable of improving the design margin of a contact hole. CONSTITUTION: A plurality of gate electrodes(23) are formed on a semiconductor substrate(21). A source/drain region is formed in the substrate. The first contact hole is formed on the source/drain region by self-aligning. A bit line(28) is formed by depositing a polysilicon layer on the resultant structure. The second contact hole is formed not to be overlapped with the gate electrode by self-aligning. Then, a metal line is formed on the resultant structure.