METHOD FOR FABRICATING SILICON WAFER

摘要

PURPOSE: A method for fabricating a silicon wafer is provided to simplify a fabricating process and reduce damage to an edge of a wafer and minimizing a decrease of a thickness of a bare wafer by eliminating the necessity of a lapping process. CONSTITUTION: A silicon single crystal ingot is grown and sliced to form a bare wafer(S101). An edge polishing process is performed to make the shape of the edge of the bare wafer uniform(S102). An etch process is performed to eliminate the damage to the surface of the bare wafer(S103). A double surface grinding process is performed to reduce the thickness difference of the surface of the bare wafer and improve planarization(S104). A double surface polishing process is performed to reduce the surface roughness of the bare wafer and make the surface of the bare wafer become a mirror surface(S105).