| 摘要 |
PROBLEM TO BE SOLVED: To provide a developing method and a developing apparatus by which pattern failure can be prevented and high throughput be also realized during removal of a rinsing liquid on a substrate. SOLUTION: While a wafer W with a developed resist pattern is turned at 300-1000 rpm, preferably at 500 rpm, an organic solvent 43 containing fluorine is discharged to substitute a rinsing liquid 42 left on the wafer W for the organic solvent 43. Hydrofluoroether (HFE) is used as an organic solvent for example, so that the contact angle of the organic solvent to a pattern is set at 70°to reduce attraction producing among the patterns as much as possible as well as to prevent pattern failure. Furthermore, since the volatility of the HFE is high, quick drying can be realized and throughput be also improved. COPYRIGHT: (C)2003,JPO |
