| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents a parasitic transistor formed in a well region 4 from being brought to ON-state, even when the voltage of an active layer is changed abruptly. SOLUTION: On the substrate of a semiconductor on insulator having a dielectric layer 2 formed on a support substrate 1 and an active layer 3 formed on the dielectric layer 2, a P-type well region 4 is formed by the implantation of impurity ions, and at least one NMOS transistor 20 is formed in the P-type well region 4. Since a contact region for back gate 7 is formed to adjoin or overlap the source region 5 of the NMOS transistor 20 formed in the well region 4, a parasitic resistance 12 between the base of a parasitic NPN transistor 11 and the contact region for back gate 7 can be reduced to such an extent that it can be ignored, so that the parasitic NPN transistor 11 being brought to an ON-state is prevented. COPYRIGHT: (C)2003,JPO
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