| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of minimizing the surface etching damage of an active region of a semiconductor substrate and simplifying manufacturing processes. CONSTITUTION: After sequentially forming a gate isolating layer(13) and a gate electrode(15) on an active region of a semiconductor substrate(10), An insulating layer made of an oxide layer is deposited on the entire surface of the resultant structure. A spacer(33) is formed at both sidewalls of the gate electrode by carrying out a dry etching on the insulating layer. At this time, the remaining insulating layer(32) located on the active region of the semiconductor substrate, has a thickness of 200-300 angstrom, thereby minimizing the surface etching damage of the active region due to the following etching process. Then, a wet etching process is carried out for exposing the surface of the active region. Preferably, the insulating layer has a thickness of 800-1200 angstrom.
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