| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the inductance of an inductor element can be made changeable and which can obtain desired characteristics, and to provide a method of manufacturing the device. SOLUTION: This semiconductor device is constituted by connecting first wiring 12 to one end of the wiring 20 of the inductor element 30 formed on a substrate through a dielectric film, and second wiring 12a to a midpoint of the wiring 20 through another dielectric film. At the time of manufacturing this semiconductor device having the inductor element 30 formed on the substrate, a first conductive film, a dielectric film, and a second conductive film are formed on an insulating film and lower-layer wiring 10, 12 and 12a is formed by patterning the first conductive film. Then upper-layer wiring 20 and 23 is formed by patterning a third conductive film so that the wiring 20 and 23 may be connected to the lower-layer wiring 10, 12 and 12a directly or through the second conductive film and dielectric film and connected to the lower-layer wiring 10, 12 and 12a through the second conductive film and dielectric film. COPYRIGHT: (C)2003,JPO
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