| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic semiconductor element whose insulation film arranged between an organic semiconductor unit and a gate electrode is formed through plasma treatment under atmospheric pressure, and to provide the manufacturing method thereof. SOLUTION: The organic semiconductor element is provided with a source electrode S, a drain electrode D, the organic semiconductor unit connecting the source electrode S and the drain electrode D, the gate electrode G, and the insulation film arranged between the organic semiconductor unit and the gate electrode G. The insulation film is formed through the plasma treatment under atmospheric pressure. COPYRIGHT: (C)2003,JPO
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