| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for enabling backing wiring to be formed without reducing a pixel opening rate and resolution in a long- length image sensor. SOLUTION: The manufacturing method of the linear image sensor includes a process for successively forming a transfer channel that is sandwiched by channel stopper regions, a gate oxide film, a transfer gate, and an interlayer insulating film on a semiconductor substrate, and a process for forming a photoresist layer on the interlayer insulating film and allowing the photoresist layer subjected to patterning to form an opening pattern on the transfer gate. The pattern process includes a process for exposing the photoresist layer by a reduced exposure method. COPYRIGHT: (C)2003,JPO
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