发明名称 POSITIVE RESIST COMPOSITION, MULTILAYER RESIST MATERIAL USING THE SAME AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a chemically amplified positive resist applicable to both a process using an antireflection film and a process not using the film, excellent in resist pattern shape, sensitivity, focal depth-width quality and post-exposure temporal stability and having no substrate dependence. <P>SOLUTION: In a positive resist composition comprising (A) a resin component having solubility in an alkaline aqueous solution increased by the action of an acid and (B) a compound which generates an acid upon irradiation with a radiation, the component (B) is a mixture of (b<SB>1</SB>) cyano-containing oximesulfonate compounds and (b<SB>2</SB>) bissulfonyldiazomethanes and/or onium salts. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003177540(A) 申请公布日期 2003.06.27
申请号 JP20020330598 申请日期 2002.11.14
申请人 TOKYO OHKA KOGYO CO LTD 发明人 SATO KAZUFUMI;NITTA KAZUYUKI;YAMAZAKI AKIYOSHI;SAKAI TOMOAKI;NAKAYAMA TOSHIMASA
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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