发明名称 QUALITY EVALUATION METHOD OF MIRROR-FINISHED AND CHAMFERED WAFER
摘要 PROBLEM TO BE SOLVED: To provide a quality evaluation method of a mirror-finished and chamfered wafer for accurately evaluating the quality of a mirror-finished and chamfered surface. SOLUTION: An alkaline etching liquid is used for the chamfered surface of mirror-finished silicon wafer W for etching by 1.5μm, thus selectively etching a side line existing on the chamfered surface, various kinds of scratches, and recessed defects such as machining damage in PCR, amplifying even a fine recessed defect that cannot be detected by the conventional wafer edge defect automatic inspection apparatus to a size that can be detected as a pit P, and more accurately evaluating the quality of the mirror-finished and chamfered wafer W. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003177100(A) 申请公布日期 2003.06.27
申请号 JP20010379119 申请日期 2001.12.12
申请人 SUMITOMO MITSUBISHI SILICON CORP 发明人 MAEDA SATOSHI;KANDA HAJIME;SASAKI YASUHARU
分类号 G01B11/30;G01B21/30;G01N21/956;H01L21/306;H01L21/66;(IPC1-7):G01N21/956 主分类号 G01B11/30
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