THIN FILM TRANSISTOR, ITS FABRICATING METHOD AND LIQUID CRYSTAL DISPLAY,申请号KR20020080612-传众专利搜索

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发明名称	THIN FILM TRANSISTOR, ITS FABRICATING METHOD AND LIQUID CRYSTAL DISPLAY
摘要	PURPOSE: To provide a method for fabricating a thin film transistor comprising TFTs different in thickness of gate insulation film on the same substrate in which breakdown voltage is prevented from deteriorating and the operation of a parasitic TFT can be suppressed at the edge part of an operating layer while scaling down furthermore. CONSTITUTION: The method for fabricating a thin film transistor comprises a step for forming a negative photoresist film 26 on a first insulating film 25 covering a first insular semiconductor film 24a, a step for forming a resist mask having an opening from the circumferential edge of the first insular semiconductor film 24a to the surface on the inside by exposing and developing the negative photoresist film 26 from the rear side of a transparent substrate 21, a step for etching the first insulating film 25 in the opening of the resist mask, a step for forming a second insulating film covering the first insulating film 25 and a conductor film thereon, and a step for forming first and second gate electrodes.
申请公布号	KR20030052995(A)	申请公布日期	2003.06.27
申请号	KR20020080612	申请日期	2002.12.17
申请人	FUJITSU DISPLAY TECHNOLOGIES CORPORATION	发明人	DOI SEIJI;HOTTA KAZUSHIGE;HIRANO TAKUYA;YANAI KENICHI
分类号	G02F1/1368;G02F1/136;G02F1/1362;G09F9/00;G09F9/30;G09F9/35;H01L21/336;H01L21/77;H01L21/8238;H01L21/84;H01L27/08;H01L27/092;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):G02F1/136	主分类号	G02F1/1368
代理机构		代理人
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