METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal line of a semiconductor device is provided to be capable of improving the uniformity of the semiconductor device by improving dual damascene pattern forming process. CONSTITUTION: After sequentially forming the first interlayer dielectric(202), an etching stop layer(203) and the second interlayer dielectric(204) on a substrate(201), a trench and a via contact hole are formed in the resultant structure. An anti-diffusing layer(207) and metal line material are sequentially formed on the resultant structure. A CMP(Chemical Mechanical Polishing) process is carried out for exposing the anti-diffusing layer(207). At this time, a metal line(208) is completed in the trench and via contact hole. A metal thin film(209) is formed on the resultant structure. The resultant structure is re-polished for exposing the second interlayer dielectric(204).