发明名称 RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist pattern forming method capable of simultaneously suppressing a PED phenomenon due to contaminants in the air and a PED phenomenon due to diffusion of an acid or a base in a protective film into a layer of a resist. <P>SOLUTION: During the time from at least the end of exposure to the commencement of heat treatment, a protective film 15 containing a photobase is kept on a layer 13 of a chemically amplified resist when the layer 13 is an acid catalyst type one, and a protective film 15 containing a photoacid is kept on the layer 13 when the layer 13 is a base catalyst type one, and a required resist pattern is formed in the layer 13. <P>COPYRIGHT: (C)2003,JPO
申请公布号 JP2003177543(A) 申请公布日期 2003.06.27
申请号 JP20020285021 申请日期 2002.09.30
申请人 OKI ELECTRIC IND CO LTD 发明人 SHIMIZU YOSHIYUKI
分类号 G03F7/11;G03F7/038;G03F7/039;H01L21/027 主分类号 G03F7/11
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