发明名称 |
MASK AND METHOD FOR MAKING THE SAME, AND METHOD FOR MAKING SEMICONDUCTOR DEVICE |
摘要 |
A mask allowing an alignment of TTR method and a complementary division and having a high strength. A method for making the mask. A method for making semiconductor devices having high pattern accuracy. A stencil mask having, in four small regions (A-D) on a membrane, stripe beams (grids) (4) formed by etching a silicon wafer, wherein the stripes are symmetrically arranged about the center point of the membrane, and any one of the grids is connected to another grid or the silicon wafer around the periphery of the membrane (the support frame). A method for making the stencil mask. A method for making semiconductor devices by use of the stencil mask.
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申请公布号 |
WO03052803(A1) |
申请公布日期 |
2003.06.26 |
申请号 |
WO2002JP12689 |
申请日期 |
2002.12.04 |
申请人 |
SONY CORPORATION;OMORI, SHINJI;MORIYA, SHIGERU |
发明人 |
OMORI, SHINJI;MORIYA, SHIGERU |
分类号 |
G03C5/00;G03F1/20;G03F1/68;G03F9/00;(IPC1-7):H01L21/027;G03F7/20;G03F1/16;H01J37/147 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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